Method for fabricating image sensor
US7989245B2 · kind B2 · utility
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2References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a second conductivity type first epitaxial layer filling the trench and being a part of the photodiode, and a first conductivity type second epitaxial layer formed over the second conductivity type first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.