Methods for separating individual semiconductor devices from a carrier
US7989266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.