Patent · US Active

Surface treatment of silicon

US7989346B2 · kind B2 · utility

5Cited by

16References

7Claims

0Family size

Inventors

Adam Letize · Wallingford, US
Andrew M. Krol · Bristol, US
Ernest Long · Burlington, US
Steven A. Castaldi · Torrington, US

Key dates

Filing date	Jul 27, 2009
Grant date	Aug 2, 2011
Priority date	—
Expiry date	Jul 27, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a resist pattern on a silicon semiconductor substrate having an anti-reflective layer thereon is described. The method includes the steps of a) modifying surface energy of the anti-reflective surface with a chemical treatment composition, b) applying a UV etch resist to the treated anti-reflective surface, and c) exposing the anti-reflective surface to a wet chemical etchant composition to remove exposed areas of the anti-reflective surface. Thereafter, the substrate can be metallized to provide a conductor pattern. The method may be used to produce silicon solar cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.