MOS devices with improved source/drain regions with SiGe
US7989901B2 · kind B2 · utility
10Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2007 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Mar 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.