Manufacturing method of semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing
US7993964B2 · kind B2 · utility
214Cited by
2References
6Claims
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Key dates
| Filing date | Jul 27, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Sep 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.