Process for producing semiconductive porcelain composition/electrode assembly
US7993965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Mar 12, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/85
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 Ω·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary. Also, there is a process for producing a semiconductive porcelain composition/electrode assembly wherein an electrode is joined to a semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary, the process including joining the electrode to the semiconductive porcelain composition, followed by conducting a heat treatment at a temperature of from 100° C. to 600° C. for 0.5 hour to 24 hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.