Method for manufacturing a semiconductor device
US7993974B2 · kind B2 · utility
0Cited by
4References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 24, 2008 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jun 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.