Manufacturing method of thin film transistor and manufacturing method of display device
US7993991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2008 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jul 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A manufacturing method of a thin film transistor and a display device using a small number of masks is provided. A first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked. Then, a resist mask having a recessed portion is formed thereover using a multi-tone mask. First etching is performed to form a thin-film stack body, and second etching in which the thin-film stack body is side-etched is performed to form a gate electrode layer. The resist is made to recede, and then, a source electrode, a drain electrode, and the like are formed; accordingly, a thin film transistor is manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.