Microwave heating for semiconductor nanostructure fabrication
US7994027B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 11, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | May 11, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention grows nanostructures using a microwave heating-based sublimation-sandwich SiC polytype growth method comprising: creating a sandwich cell by placing a source wafer parallel to a substrate wafer, leaving a small gap between the source wafer and the substrate wafer; placing a microwave heating head around the sandwich cell to selectively heat the source wafer to a source wafer temperature and the substrate wafer to a substrate wafer temperature; creating a temperature gradient between the source wafer temperature and the substrate wafer temperature; sublimating Si- and C-containing species from the source wafer, producing Si- and C-containing vapor species; converting the Si- and C-containing vapor species into liquid metallic alloy nanodroplets by allowing the metalized substrate wafer to absorb the Si- and C-containing vapor species; and growing nanostructures on the substrate wafer once the alloy droplets reach a saturation point for SiC. The substrate wafer may be coated with a thin metallic film, metal nanoparticles, and/or a catalyst.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.