Method for patterning crystalline indium tin oxide using femtosecond laser
US7994029B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jan 22, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jan 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J61/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.