Semiconductor probe having wedge shape resistive tip and method of fabricating the same
US7994499B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2007 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jun 28, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01Q60/40
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.