Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
US7994507B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2010 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Aug 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.