Semiconductor light emitting device with integrated electronic components
US7994514B2 · kind B2 · utility
2Cited by
13References
10Claims
0Family size
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Key dates
| Filing date | Apr 21, 2006 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Dec 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12032
Abstract
One or more circuit elements such as silicon diodes, resistors, capacitors, and inductors are disposed between the semiconductor structure of a semiconductor light emitting device and the connection layers used to connect the device to an external structure. In some embodiments, the n-contacts to the semiconductor structure are distributed across multiple vias, which are isolated from the p-contacts by one or more dielectric layers. The circuit elements are formed in the contacts-dielectric layers-connection layers stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.