Nitride-based semiconductor light emitting diode
US7994525B2 · kind B2 · utility
464Cited by
1References
10Claims
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Key dates
| Filing date | Dec 14, 2010 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Dec 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.