Thin film field-effect transistor and display using the same
US7994579B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Mar 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor layer, a resistance layer having an electric conductivity that is lower than an electric conductivity of the active layer is provided between the active layer and at least one of the source electrode or the drain electrode, and an intermediate layer comprising an oxide comprising an element having a stronger bonding force with respect to oxygen than that of the oxide semiconductor in the active layer is provided between the active layer and the resistance layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.