Package structure of photoelectronic device and fabricating method thereof

US7994628B2 · kind B2 · utility

Assignee

• ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. · TW

Inventors

• Wen-Liang Tseng · Hsinchu, TW
• LUNG-HSIN CHEN · Hsinchu, TW
• JIAN-SHIHN TSANG · New Taipei, TW

Key dates

• Filing date: Oct 21, 2008
• Grant date: Aug 9, 2011
• Expiry date: Jun 3, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8585

Abstract

A package structure for photoelectronic devices comprises a silicon substrate, a first insulating layer, a reflective layer, a second insulating layer, a first conductive layer, a second conductive layer and a die. The silicon substrate has a first surface and a second surface, wherein the first surface is opposed to the second surface. The first surface has a reflective opening, and the second surface has at least two electrode via holes connected to the reflective opening and a recess disposed outside the electrode via holes. The first insulating layer overlays the first surface, the second surface and the recesses. The reflective layer is disposed on the reflective opening. The second insulating layer is disposed on the reflective layer. The first conductive layer is disposed on the surface of the second insulating layer. The second conductive layer is disposed on the surface of the second surface and inside the electrode via holes. The die is fixed inside the reflective opening and electrically connected to the first conductive layer.