Circuit and method of temperature dependent power amplifier biasing
US7994862B1 · kind B1 · utility
46Cited by
6References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Feb 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/468
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.