Solid-state laser with spatially-tailored active ion concentration using valence conversion with surface masking and method
US7995631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2006 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Apr 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1643
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A material having a surface and a dopant in the material distributed whereby the material has a spatially variant optical flux density profile. In accordance with the invention, tailored non-uniform gain profiles within a Yb:YAG laser component (rod, slab, disc, etc.) are achieved by a spatial material modification in the spatially masked pre-forms. High temperature-assisted reduction leads to the coordinate-dependent gain profiles, which are controlled by the topology of the deposited solid masks. The gain profiles are obtained by reducing the charge state of the laser-active trivalent Yb3+ ions into inactive divalent Yb2+ ions. This valence conversion process is driven by mass transport of ions and oxygen vacancies. These processes, in turn, affect the dopant distribution throughout the surface and bulk laser crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.