Method for producing a semiconductor laser, and semiconductor laser

US7995633B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Juergen Dachs · Baar-Ebenhausen, DE
• Stefan Illek · Donaustauf, DE
• Roland Schulz · Portland, US
• Thomas Schwarz · Rhede, DE
• Frank Singer · Regenstauf, DE
• Heiko Unold · Neutraubling, DE

Key dates

• Filing date: Feb 13, 2009
• Grant date: Aug 9, 2011
• Expiry date: May 30, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0201
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for producing a multiplicity of semiconductor lasers (100) comprising the steps of providing a carrier wafer (30), producing an assembly (70) by applying a multiplicity of semiconductor laser chips (4) to a top side (31) of the carrier wafer (30), and singulating the assembly (70) to form a multiplicity of semiconductor lasers (100). Each semiconductor laser (100) comprises a mounting block (3) and at least one semiconductor laser chip (4). Each mounting block (3) has a mounting area (13) which runs substantially perpendicular to a top side (12) of the mounting block (3), on which top side the semiconductor laser chip (4) is arranged. The mounting area (13) is produced during the singulation of the assembly.