Semiconductor laser
US7995635B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 2010 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1212
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A wavelength tunable laser according to the present invention includes a first facet and a second facet opposite the first facet, a reflective region provided adjacent to the second facet, and a gain region provided between the first facet and the reflective region. The reflective region has a plurality of reflection peak wavelengths that periodically vary at a predetermined wavelength interval. The first facet and the reflective region constitute a laser cavity. Furthermore, the gain region includes an active layer where light is generated, a diffraction grating layer having a diffraction grating whose grating pitch varies in a light propagation direction, a refractive-index control layer provided between the active layer and the diffraction grating layer, a first electrode for injecting current into the active layer, and a plurality of second electrodes arranged in the light propagation direction to inject current into the refractive-index control layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.