Methods of etching silicon-containing films on silicon substrates
US7998359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2010 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Sep 24, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.