Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
US7998372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2006 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Dec 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/773
Abstract
Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.