DNA-based electronic diodes and their applications
US7998727B2 · kind B2 · utility
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2References
7Claims
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Key dates
| Filing date | May 12, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Oct 26, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device provides a metal contact, a DNA layer, wherein the metal layer and the DNA layer are adapted to form a Schottky barrier junction there between, and a conductive contact with the DNA layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.