Manufacturing method of light emitting diode including current spreading layer
US7998771B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 26, 2007 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Feb 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.