High efficiency solar cell fabrication
US7998863B2 · kind B2 · utility
8Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a contact structure and a contact structure so formed is described. The structure contacts an underlying layer of a semiconductor junction, wherein the junction comprises the underlying layer of a semiconductor material and is separated from an overlying layer of semiconductor material by creating an undercut region to shade subsequent metal formation. Various steps are performed using inkjet printing techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.