Method for selective deposition and devices
US7998878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2009 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Feb 9, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45551
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.