Image sensor and method for fabricating the same
US7999252B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 23, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Aug 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.