Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the TFT
US7999261B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2009 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Jan 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.