MIS field effect transistor and method for manufacturing the same
US7999286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2007 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Apr 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/602
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The MIS field-effect transistor includes: a substrate; a nitride semiconductor multilayer structure portion formed on the substrate, including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked thereon and a third group III-V nitride semiconductor layer of the first conductivity type stacked thereon; a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over these first, second and third group III-V nitride semiconductor layers; a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer via the gate insulating film; a drawn portion electrically connected to the first group III-V nitride semiconductor layer and drawn from the nitride semiconductor multilayer structure portion in a direction parallel to the substrate; a drain electrode formed in contact with the drawn portion; and a source electrode electrically connected to the third group III-V nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.