Aminosilanes for shallow trench isolation films
US7999355B2 · kind B2 · utility
4Cited by
21References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2009 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Jun 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.