Semiconductor device and method of manufacturing same
US7999401B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 24, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | May 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device has a semiconductor chip embedded in an insulating layer. A semiconductor device comprises a semiconductor chip formed to have external connection pads and a positioning mark that is for via formation; an insulating layer containing a non-photosensitive resin as an ingredient and having a plurality of vias; and wiring electrically connected to the external connection pads through the vias and at least a portion of which is formed on the insulating layer. The insulating layer is formed to have a recess in a portion above the positioning mark. The bottom of the recess is the insulating layer alone. Vias have high positional accuracy relative to the mark.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.