Patent · US Active

Structures for resistive random access memory cells

US8000128B2 · kind B2 · utility

62Cited by

3References

20Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Shaoping Li · Naperville, US
Insik Jin · Edina, US
Zheng Gao · San Jose, US
Eileen Yan · San Jose, US
Kaizhong Gao · North Oaks, US
Haiwen Xi · Prior Lake, US
Song S. Xue · Morristown, US

Key dates

Filing date	Jul 14, 2010
Grant date	Aug 16, 2011
Priority date	—
Expiry date	Jul 14, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/72
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.