Patent · US Active

Solid state laser device with reduced temperature dependence

US8000363B2 · kind B2 · utility

0Cited by

2References

14Claims

0Family size

Assignee

KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

Ulrich Weichmann · Aachen, DE
Jaione Bengoechea Apezteguia · Aachen, DE
Patrice Camy · Paris, FR
Jean-Louis Doualan · Rots, FR
Richard Moncorge · Pont-à-Mousson, FR

Key dates

Filing date	Feb 22, 2008
Grant date	Aug 16, 2011
Priority date	—
Expiry date	Feb 22, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01S3/2391
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

The present invention relates to a solid state laser device with a solid state gain medium between two resonator end mirrors (3, 5) and a GaN-based pump laser (1) arranged to optically pump the solid state gain medium. The solid state gain medium is a Pr3+-doped crystalline or polycrystalline host material (4) which has a cubic crystalline structure and highest phonon energies of ≦600 cm−1 and provides a band gap of ≧5.5 eV. The proposed solid state laser can be designed to emit at several visible wavelengths with the emitted power showing a reduced dependence on the temperature of the GaN-based pump laser (1).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.