Organic thin film transistor and method of fabricating the same
US8001491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 25, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Nov 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
A method of fabricating an organic thin film transistor is provided. The method includes forming a source, a drain and a gate on a substrate and forming a dielectric layer to isolate the gate from the source and isolate the gate from the drain. An organic active material layer is formed on the substrate to fill a channel region between the source and the drain and cover the source and the drain. A barrier material layer is formed on the organic active material layer. Thereafter, the barrier material layer and the organic active material layer are patterned to form a barrier layer and an organic active layer and expose the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.