Patent · US Active

Method of producing a slab type two-dimensional photonic crystal structure

US8002998B2 · kind B2 · utility

3Cited by
3References
5Claims
0Family size

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Key dates

Filing dateAug 21, 2007
Grant dateAug 23, 2011
Priority date
Expiry dateMay 31, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B6/12
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A first main face of a substrate of a dielectric single crystal is etched to form recesses in the substrate. A second main face of the substrate is mechanically processed to form a slab, so that the recesses pass through the substrate to form through holes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.