Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization
US8003423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2008 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Feb 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.