Method of manufacturing organic film transistor
US8003435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2005 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Dec 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K77/111
Abstract
A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.