Compound semiconductor device and manufacturing method thereof
US8003452B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 2009 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Mar 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A compound semiconductor device includes a carrier transit layer formed over a substrate; a carrier supply layer formed over the carrier transit layer; a first metal film and a second metal film formed over the carrier supply layer; a first Al comprising film formed over the first metal film; a second Al comprising film formed over the second metal film; a first Au comprising film formed over the first metal film and is free of direct contact with the first Al comprising film; a second Au comprising film formed over the second metal film and free of direct contact with the second Al comprising film; and a gate electrode that is located over the carrier supply layer between the first metal film and the second metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.