Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation
US8003491B2 · kind B2 · utility
4Cited by
6References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 2008 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Feb 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.