Method for producing a structure on the surface of a substrate

US8003538B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Christoph Nolscher · Dresden, DE
• Dietmar Temmler · Dresden, DE
• Peter Moll · Dresden, DE

Key dates

• Filing date: May 5, 2008
• Grant date: Aug 23, 2011
• Expiry date: Jan 11, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3088
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.