Patent · US Active

LED semiconductor element having increased luminance

US8003974B2 · kind B2 · utility

5Cited by

20References

12Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Peter Heidborn · Bad Kötzting, DE
Reiner Windisch · Nittendorf, DE
Ralph Wirth · Lappersdorf, DE

Key dates

Filing date	Aug 28, 2007
Grant date	Aug 23, 2011
Priority date	—
Expiry date	Aug 28, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.