High density coupling of quantum dots to carbon nanotube surface for efficient photodetection
US8003979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2007 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Nov 17, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/847
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a method of preparing a carbon nanotube-quantum dot conjugate having a high density of quantum dots (QDs) on its surface. This method involves providing a plurality of semiconductor quantum dots and providing a thiol-functionalized carbon nanotube having a plurality of terminal thiol groups on its surface. The plurality of semiconductor quantum dots are attached to the surface of the carbon nanotube under conditions effective to yield a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention also relates to a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention further relates to a photodetector device. This device includes a substrate and a nanocomposite layer. The nanocomposite layer includes a plurality of the carbon nanotube-quantum dot conjugates previously described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.