Semiconductor optical device with suppressed double injection phenomenon
US8003995B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 25, 2008 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Jul 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device 10 provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The mesa includes the first cladding layer, the active layer, the tunnel junction layer and the second cladding layer on the n-type InP substrate in this order. The tunnel junction layer comprises an n-type layer coming in contact with the active layer and a p-type layer between the active layer and the n-type layer. The n-type layer has a carrier concentration higher than that of the second cladding layer, while, the p-type layer may have the band gap energy greater than that of the second cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.