Semiconductor device and a method of manufacturing the same
US8004010B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Aug 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
In a semiconductor device with a shared contact, a gate electrode is formed via a gate insulating film on a semiconductor substrate and a sidewall insulating film is formed on both side faces of the gate electrode. At least one of the surface parts of the semiconductor substrate adjacent to both sides of the gate electrode is removed beyond the lower part of the sidewall insulating film and to the underside of the gate electrode. Then, the gate insulating film exposed in the remove part is removed. An impurity-doped semiconductor layer is formed in the part where the semiconductor substrate and the gate insulating film have been removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.