Patent · US Active

Semiconductor integrated circuit device having metal interconnect regions placed symmetrically with respect to a cell boundary

US8004014B2 · kind B2 · utility

4Cited by
5References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 17, 2009
Grant dateAug 23, 2011
Priority date
Expiry dateAug 17, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10

Abstract

A layout structure of a semiconductor integrated circuit is provided with which narrowing and breaking of metal interconnects near a cell boundary can be prevented without increasing the data amount and processing time for OPC. A cell A and a cell B are adjacent to each other along a cell boundary. The interconnect regions of metal interconnects from which to the cell boundary no other interconnect region exists are placed to be substantially axisymmetric with respect to the cell boundary, while sides of diffusion regions facing the cell boundary are asymmetric with respect to the cell boundary.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.