Piezoelectric actuation structure including an integrated piezoresistive strain gauge and its production method
US8004154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2010 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Oct 5, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
Abstract
The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.