Patent · US Active

Light emitting device with anodized metallization

US8004188B2 · kind B2 · utility

1Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 21, 2008
Grant dateAug 23, 2011
Priority date
Expiry dateApr 21, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K59/80522

Abstract

A light emitting device (100) is provided, comprising a substrate (101), a first electrically conductive layer (102), a light emitting layer (103), and a second electrically conductive layer (104). The light emitting device (100) further comprises at least one metal shunt (105) which is in electrical contact with said first electrically conductive layer (102). The at least one metal shunt (105) is isolated from said second electrically conductive layer (104) at least by means of a dielectric oxide layer (106). The present invention allows for the use of electrically insulating material between one or more metal shunts and a cathode layer without reducing the effective pixel area of the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.