Light emitting device with anodized metallization
US8004188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2008 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Apr 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/80522
Abstract
A light emitting device (100) is provided, comprising a substrate (101), a first electrically conductive layer (102), a light emitting layer (103), and a second electrically conductive layer (104). The light emitting device (100) further comprises at least one metal shunt (105) which is in electrical contact with said first electrically conductive layer (102). The at least one metal shunt (105) is isolated from said second electrically conductive layer (104) at least by means of a dielectric oxide layer (106). The present invention allows for the use of electrically insulating material between one or more metal shunts and a cathode layer without reducing the effective pixel area of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.