Photon-emission scanning tunneling microscopy
US8006315B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Dec 20, 2006 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Dec 30, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y35/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.