Semiconductor sensor having heater on insulation film and manufacturing method of the same
US8006553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2009 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jul 22, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/0214
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.