Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus
US8007588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2007 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | May 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68728
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.